The fabrication of p - Ge / n - Si photodetectors , compatible with back - end Si CMOS processing , by low temperature ( < 400 oC ) molecular beam epitaxy and electron - beam evaporation
نویسندگان
چکیده
We report on the low temperature growth, by molecular beam epitaxy (375 C) and electron-beam evaporation (300 C), of p-Ge films on n-Si substrates for fabricating p-n junction photodetectors, aimed at the integration of opto-electronic components with back-end Si CMOS processing. Various surface hydrogen and hydrocarbon removal treatments were attempted to improve device properties. We invoke Ge diffusion and growth modes as a function of deposition temperature and rate to correlate structural analysis with the device performance.
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